Scaled down MOSFETS
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AN IDEALLY SCALED-DOWN PARTIALLY-DEPLETED SOI CMOS CONCEPT FOR 90nm NODE AND BEYOND
H. Dang, T. Matsumoto, K. Eikyu, K. Ota, Y. Hirano, T. Iwamatsu, T.Ipposhi, S. Maegawa, and Y. Inoue
Abstract
In this paper, we present an ideal concept of scaling down partially-depleted silicon on insulator (PD-SOI) CMOS for 90nm node and beyond...